Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots
Identifieur interne : 017859 ( Main/Repository ); précédent : 017858; suivant : 017860Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots
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Abstract
We report time-resolved photoluminescence measurements as a function of temperature for InAs quantum dots grown by molecular-beam epitaxy on GaAs(100). As the temperature is increased, the decays on the high-energy side of the photoluminescence band speed up, while the decay times on the low-energy side of the band increase. This increase occurs up to a drop temperature, which increases with decreasing emission energy, beyond which the decay times decrease. We present a coupled rate-equation model which includes the effects of thermal emission from quantum dot states into the wetting layer followed by transport and recapture, which reproduces the dispersive temperature dependence observed. The activation energy for thermal emission from quantum dots emitting at a given frequency is found to be approximately one-half the effective band-gap difference between the quantum dot and the wetting layer. This result is consistent with detailed balance requirements under the assumption that, on average, electrons and holes are captured and emitted by quantum dots in pairs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots</title><author><name sortKey="Yang, Weidong" uniqKey="Yang W">Weidong Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science Institute, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics and Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Lowe Webb, Roger R" uniqKey="Lowe Webb R">Roger R. Lowe Webb</name></author><author><name sortKey="Lee, Hao" uniqKey="Lee H">Hao Lee</name></author><author><name sortKey="Sercel, Peter C" uniqKey="Sercel P">Peter C. Sercel</name></author></titleStmt><publicationStmt><idno type="inist">97-0587280</idno><date when="1997-11-15">1997-11-15</date><idno type="stanalyst">PASCAL 97-0587280 AIP</idno><idno type="RBID">Pascal:97-0587280</idno><idno type="wicri:Area/Main/Corpus">017E58</idno><idno type="wicri:Area/Main/Repository">017859</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Energy gap</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor quantum dots</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320D</term><term>7855C</term><term>7866F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Couche épitaxique semiconductrice</term><term>Bande interdite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report time-resolved photoluminescence measurements as a function of temperature for InAs quantum dots grown by molecular-beam epitaxy on GaAs(100). As the temperature is increased, the decays on the high-energy side of the photoluminescence band speed up, while the decay times on the low-energy side of the band increase. This increase occurs up to a drop temperature, which increases with decreasing emission energy, beyond which the decay times decrease. We present a coupled rate-equation model which includes the effects of thermal emission from quantum dot states into the wetting layer followed by transport and recapture, which reproduces the dispersive temperature dependence observed. The activation energy for thermal emission from quantum dots emitting at a given frequency is found to be approximately one-half the effective band-gap difference between the quantum dot and the wetting layer. This result is consistent with detailed balance requirements under the assumption that, on average, electrons and holes are captured and emitted by quantum dots in pairs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>56</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>YANG (Weidong)</s1></fA11><fA11 i1="02" i2="1"><s1>LOWE WEBB (Roger R.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEE (Hao)</s1></fA11><fA11 i1="04" i2="1"><s1>SERCEL (Peter C.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Materials Science Institute, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></fA14><fA20><s1>13314-13320</s1></fA20><fA21><s1>1997-11-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0587280</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report time-resolved photoluminescence measurements as a function of temperature for InAs quantum dots grown by molecular-beam epitaxy on GaAs(100). As the temperature is increased, the decays on the high-energy side of the photoluminescence band speed up, while the decay times on the low-energy side of the band increase. This increase occurs up to a drop temperature, which increases with decreasing emission energy, beyond which the decay times decrease. We present a coupled rate-equation model which includes the effects of thermal emission from quantum dot states into the wetting layer followed by transport and recapture, which reproduces the dispersive temperature dependence observed. The activation energy for thermal emission from quantum dots emitting at a given frequency is found to be approximately one-half the effective band-gap difference between the quantum dot and the wetting layer. This result is consistent with detailed balance requirements under the assumption that, on average, electrons and holes are captured and emitted by quantum dots in pairs.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fN21><s1>356</s1></fN21><fN47 i1="01" i2="1"><s0>9722M001735</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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